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IXTH 16P20
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min.
typ.
max.
TO-247 AD Outline
g fs
V DS = -10 V; I D = I D25 , pulse test
6
10
S
C iss
C oss
V GS = 0 V, V DS = -25 V, f = 1 MHz
2800
550
pF
pF
1
2
3
C rss
t d(on)
240
33
pF
ns
t r
V GS = -10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
26
ns
t d(off)
R G = 4.7 ? (External)
65
ns
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
t f
25
ns
Dim.
Millimeter
Inches
Q g(on)
95
nC
Min. Max.
A 4.7 5.3
Min. Max.
.185 .209
A 1
A 2
Q gs
Q gd
V GS = -10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
27
40
nC
nC
2.2 2.54
2.2 2.6
b 1.0 1.4
.087 .102
.059 .098
.040 .055
R thJC
0.42
K/W
b 1
b 2
1.65 2.13
2.87 3.12
.065 .084
.113 .123
R thCS
0.25
K/W
C .4 .8
D 20.80 21.46
.016 .031
.819 .845
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
Source-Drain Diode
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
R 4.32 5.49
S 6.15 BSC
.170 .216
242 BSC
Symbol
Test Conditions
min.
typ.
max.
I S
I SM
V SD
t rr
V GS = 0
Repetitive; pulse width limited by T JM
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = I S , di/dt = 100 A/ μ s, V R = -50 V
250
-16
-64
-3
A
A
V
ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
of the following U.S. patents:
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343 6,583,505
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